click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? low ? drift ? | ? v gs1 \ 2 ? / ? t| ? = ? 5v/c ? typ. ? ultra ? low ? leakage ? i g ? = ? 150fa ? typ. ? low ? pinchoff ? v p ? = ? 2v ? typ. ? absolute ? maximum ? ratings ?? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +150c ? operating ? junction ? temperature ? +150c ? maximum ? voltage ? and ? current ? for ? each ? transistor ? ? ? note ? 1 ? \ v gss ? gate ? voltage ? to ? drain ? or ? source ? 40v ? \ v dso ? drain ? to ? source ? voltage ? 40v ? \ i g ( f ) ? gate ? forward ? current ? 10ma ? \ i g ? gate ? reverse ? current ? 10a ? maximum ? power ? dissipation ? device ? dissipation ? @ ? free ? air ? ? ? total ????????????????? 40mw ? @ ? +125c ? matching ? characteristics ? @ ? 25c ? unless ? otherwise ? noted symbol ? characteristics ? value ? units ? conditions ? | ? v gs1 \ 2 ? / ? t| ? max. ? drift ? vs. ? temperature ? 40 ? v/c ? v dg =10v, ? i d =30a ? t a = \ 55c ? to ? +125c ? | ? v ? gs1 \ 2 ? | ? max. ? offset ? voltage ? 15 ? mv ? v dg =10v, ? i d =30a ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv gss ? breakdown ? voltage ? 40 ? 60 ? \\? v ? v ds ? = ? 0 ?????????????????? i d =1na ? bv ggo ? gate \ to \ gate ? breakdown ? 40 ? \\? \\? v ? ?????? i g = ? 1na ??????????????? i d = ? 0 ??????????????? i s = ? 0 ? ? y fss ? transconductance ? full ? conduction ? ? 70 ? ? 300 ? ? 500 ? ? mho ? ? v dg = ? 10v ????????? v gs = ? 0v ?????? f ? = ? 1khz ? y fs ? typical ? operation ? 50 ? 100 ? 200 ? mho ? ????? v dg = ? 10v ????????? i d = ? 30a ?????? f ? = ? 1khz ? |y fs1 \ 2 ? / ? y ? fs | ? mismatch ? \\? 1 ? 5 ? % ?? ? i dss ? drain ? current ? full ? conduction ? ? 60 ? ? 400 ? ? 1000 ? ? a ? ? v dg = ? 10v ?????????????? v gs = ? 0v ? |i dss1 \ 2 ? / ? i dss | ? mismatch ? at ? full ? conduction ? \\? 2 ? 5 ? % ?? ? v gs (off) ? or ? v p ? gate ? voltage ? pinchoff ? voltage ? ? 0.6 ? ? 2 ? ? 4.5 ? ? v ? ? v ds = ? 10v ??????????????? i d = ? 1na ? v gs (on) ? operating ? range ? \\? \\? 4 ? v ? ?????????????? v ds =10v ????????????????? i d =30a ? ? \ i g max. ? gate ? current ? operating ? ? \\? ? \\? ? 3 ? ? pa ? ? v dg = ? 10v ? i d = ? 30a ? \ i g max. ? high ? temperature ? \\? \\? 3 ? na ? t a = ? +125c ? \ i gss max. ? at ? full ? conduction ? \\? \\? 5 ? pa ? v ds ? =0v ?????? v gs = ? 20v ? \ i gss max. ? high ? temperature ? \\? \\? 10 ? na ? t a = ? +125c ?? i ggo ? gate \ to \ gate ? leakage ? \\? 1 ? \\? pa ? v gg = ? 20v ? ? y oss ? output ? conductance ? full ? conduction ? ? \\? ? \\? ? 5 ? ? ? mho ? ? ? v dg = ? 10v ?????????????? v gs = ? 0v ? y os ? operating ? \\? 0.1 ? 0.1 ? v dg = ?? 10v ???????????? i d =30a ? |y os1 \ 2 | ? differential ? \\? 0.01 ? 0.1 ? ? cmr ? common ? mode ? rejection ? \ 20 ? log ? | ? v gs1 \ 2 / ? v ds | ? ? \\? ? 90 ? ? \\? ? db ? ? ? ? v ds ? = ? 10 ? to ? 20v ???????? i d =30a ? cmr ?\ 20 ? log ? | ? v gs1 \ 2 / ? v ds | ? \\? 90 ? \\? ? v ds ? = ? 5 ? to ? 10v ????????? i d =30a ? ? nf ? noise ? figure ? ? \\? ? \\? ? 1 ? ? db ? v ds = ? 10v ?????? v gs = ? 0v ??????? r g = ? 10m ? f= ? 100hz ??????????? nbw= ? 6hz ? e n ? voltage ? \\? 20 ? 70 ? nv/ hz ? v dg =10v ??? i d =30a ??? f=10hz ?? nbw=1hz ? ? c iss ? capacitance ? input ? ? \\? ? \\? ? 3 ? ? ? pf ? ? ? v ds = ? 10v ??????? v gs = ? 0v ??????? f= ? 1mhz ? c rss ? reverse ? transfer ? \\? \\? 1.5 ? c dd ? drain \ to \ drain ? \\? \\? 0.1 ? v dg ? = ? 20v ???? i d =30a ?????? LS5905 low noise, low drift monolithic dual n- c hannel j fet note 1 ? these ratings are limiting values above which the serviceability of any semiconductor may be impaired soic / pdip (top view) available packages: LS5905 in pdip / soic LS5905 available as bare die please contact micross for full package and die dimensions micross components europe tel: +44 1603 788967 email: chipcomponents@micross.com web: http://www.micross.com/distribution LS5905 benefits: ? tight tracking ? good matching ? ultra low leakage ? low drift the LS5905 is a high-performance monolithic dual jfet featuring tight matching and low drift over temperature specifications, an d is targeted for use in a wide range of precision inst rumentation applications where tight tracking is required. the 8 pin p-dip and 8 pin soic provide ease of manufacturing, and the symm etrical pinout prevents improper orientation. (see packaging information).
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